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Vishay Semiconductors

SQJ186EP-T1_GE3

MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SQJ
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

14 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
60 A
Rds On - Drain-Source Resistance
15 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Qg - Gate Charge
24 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
135 W
Show more parameters (2)
Channel Mode
Enhancement
Country of Origin
CN

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQJ186EP-T1_GE3 Specifications and Datasheet | ChipSourceHub