STMicroelectronics
STQ2HNK60ZR-AP
MOSFET N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STQ2HNK60ZR-AP
- Package
- TO-92-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 500 mA
- Rds On - Drain-Source Resistance
- 4.8 Ohms
- Vgs - Gate-Source Voltage
- 30 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 3 W
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (10)
- Tradename
- SuperMESH
- Height
- 4.95 mm
- Length
- 4.95 mm
- Transistor Type
- 1 N-Channel
- Width
- 3.94 mm
- Fall Time
- 50 ns
- Rise Time
- 30 ns
- Typical Turn-Off Delay Time
- 13 ns
- Typical Turn-On Delay Time
- 10 ns
- Unit Weight
- 0.007760 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.