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IXYS

IXTH04N300P3HV

MOSFET DISC MOSFET N-CH STD-POLAR3

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFET
Package
TO-247HV-3
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

19 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
3 kV
Id - Continuous Drain Current
400 mA
Rds On - Drain-Source Resistance
190 Ohms
Vgs th - Gate-Source Threshold Voltage
2 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
13 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
104 W
Show more parameters (7)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 N-Channel
Fall Time
26 ns
Rise Time
20 ns
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
12 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXTH04N300P3HV Specifications and Datasheet | ChipSourceHub