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ON Semiconductor

MUN5131DW1T1G

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
MUN5131DW1
Package
SC-88-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
2.2 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
8
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
250 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
8 at 5 mA at 10 V
Show more parameters (3)
Height
0.9 mm
Length
2 mm
Width
1.25 mm

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MUN5131DW1T1G Specifications and Datasheet | ChipSourceHub