ChipSourceHub

Microchip Technology

MX2N5116UB/TR

JFETs JFET

Basic Information

View Datasheet ↗
Manufacturer
Microchip
Brand
Microchip Technology
Product Category
JFETs
Package
UB-4
Mounting Style
SMD/SMT

Technical Specifications

11 parameters
Technology
Si
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 600 mV
Vgs - Gate-Source Breakdown Voltage
30 V
Gate-Source Cutoff Voltage
4 V
Drain-Source Current at Vgs=0
- 25 mA
Rds On - Drain-Source Resistance
175 Ohms
Pd - Power Dissipation
500 mW
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
Maximum Drain Gate Voltage
30 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MX2N5116UB/TR Specifications and Datasheet | ChipSourceHub