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ON Semiconductor / Fairchild

FQB33N10LTM

MOSFET 100V N-Ch QFET Logic Level

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Brand
ON Semiconductor / Fairchild
Product Category
MOSFET
Series
FQB33N10L
Package
TO-263-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
E

Technical Specifications

24 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
33 A
Rds On - Drain-Source Resistance
52 mOhms
Vgs - Gate-Source Voltage
20 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
3.75 W
Configuration
Single
Channel Mode
Enhancement
Show more parameters (12)
Height
4.83 mm
Length
10.67 mm
Transistor Type
1 N-Channel
Type
MOSFET
Width
9.65 mm
Forward Transconductance - Min
27 S
Fall Time
120 ns
Rise Time
470 ns
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
17 ns
Part # Aliases
FQB33N10LTM_NL
Unit Weight
0.046296 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FQB33N10LTM Specifications and Datasheet | ChipSourceHub