Vishay Semiconductors
SQD50N10-8M9L_GE3
MOSFETs 100V 50A 45watt AEC-Q101 Qualified
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SQD
- Package
- DPAK-3 (TO-252-3)
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
24 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 50 A
- Rds On - Drain-Source Resistance
- 8.9 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
- Qg - Gate Charge
- 46 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 136 W
Show more parameters (12)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- TrenchFET
- Configuration
- Single
- Country of Origin
- TW
- Fall Time
- 120 ns
- Forward Transconductance - Min
- 67 S
- Rise Time
- 12 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 95 ns
- Typical Turn-On Delay Time
- 12 ns
- Unit Weight
- 0.011640 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.