Texas Instruments
CSD17307Q5A
MOSFET 30V N Channel NexFET Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Texas Instruments
- Product Category
- MOSFET
- Series
- CSD17307Q5A
- Package
- VSONP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 73 A
- Rds On - Drain-Source Resistance
- 10.5 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 900 mV
- Vgs - Gate-Source Voltage
- 8 V
- Qg - Gate Charge
- 4 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 3 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- NexFET
- Height
- 1 mm
- Length
- 6 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.9 mm
- Forward Transconductance - Min
- 66 S
- Development Kit
- TPS51123EVM-399, TPS40195EVM-001, TPS51116EVM-001, TPS51125EVM, TPS51220EVM
- Fall Time
- 2.6 ns
- Rise Time
- 6.7 ns
- Typical Turn-Off Delay Time
- 9.3 ns
- Typical Turn-On Delay Time
- 4.6 ns
- Unit Weight
- 0.003527 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.