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Vishay / Siliconix

SIR574DP-T1-BE3

MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 13.8 m 10V

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFETs
Series
SiR574DP
Package
SO-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
150 V
Id - Continuous Drain Current
48.1 A
Rds On - Drain-Source Resistance
13.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
31.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
78 W
Show more parameters (9)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
TH
Fall Time
9 ns
Forward Transconductance - Min
45 S
Rise Time
9 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
22 ns
Typical Turn-On Delay Time
18 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIR574DP-T1-BE3 Specifications and Datasheet | ChipSourceHub