Vishay Semiconductors
IRFR9210PBF-BE3
MOSFETs TO252 200V 1.9A P-CH MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Package
- DPAK-3 (TO-252-3)
- Mounting Style
- SMD/SMT
- Packaging
- Bulk
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 200 V
- Id - Continuous Drain Current
- 1.9 A
- Rds On - Drain-Source Resistance
- 3 Ohms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 8.9 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 25 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Country of Origin
- TW
- Fall Time
- 13 ns
- Forward Transconductance - Min
- 0.98 S
- Rise Time
- 12 ns
- Transistor Type
- 1 P-Channel
- Typical Turn-Off Delay Time
- 11 ns
- Typical Turn-On Delay Time
- 8 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.