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YAGEO XSemi

XP6NA6R5H

MOSFETs N-CH 60V 66A TO-252

Basic Information

View Datasheet ↗
Manufacturer
YAGEO
Brand
YAGEO XSemi
Product Category
MOSFETs
Series
XP
Package
TO-252-3/2
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
66 A
Rds On - Drain-Source Resistance
6.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
35 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2 W
Show more parameters (9)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
TW
Fall Time
68 ns
Forward Transconductance - Min
54 S
Rise Time
56 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
33 ns
Typical Turn-On Delay Time
13 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

XP6NA6R5H Specifications and Datasheet | ChipSourceHub