Infineon Technologies
IRFIB41N15DPBF
MOSFET 150V SINGLE N-CH 45mOhms 72nC
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 41 A
- Rds On - Drain-Source Resistance
- 45 mOhms
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 72 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 200 W
- Configuration
- Single
Show more parameters (12)
- Channel Mode
- Enhancement
- Height
- 15.65 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Type
- HEXFET Power MOSFET
- Width
- 4.4 mm
- Fall Time
- 14 ns
- Rise Time
- 63 ns
- Typical Turn-Off Delay Time
- 25 ns
- Typical Turn-On Delay Time
- 16 ns
- Part # Aliases
- SP001572654
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.