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Taiwan Semiconductor

TSM35N10CP ROG

MOSFET 100V 32A N Channel Mosfet

Basic Information

View Datasheet ↗
Manufacturer
Taiwan Semiconductor
Product Category
MOSFET
Package
TO-252-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
32 A
Rds On - Drain-Source Resistance
30 mOhms
Vgs th - Gate-Source Threshold Voltage
1 V
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
34 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
83.3 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 N-Channel
Fall Time
7 ns
Rise Time
7 ns
Typical Turn-Off Delay Time
29 ns
Typical Turn-On Delay Time
7 ns
Unit Weight
0.139332 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TSM35N10CP ROG Specifications and Datasheet | ChipSourceHub