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STMicroelectronics

STH10N80K5-2AG

MOSFETs Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
MOSFETs
Package
H2PAK-2
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
800 V
Id - Continuous Drain Current
8 A
Rds On - Drain-Source Resistance
680 mOhms
Vgs - Gate-Source Voltage
- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage
5 V
Qg - Gate Charge
17.3 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
121 W
Show more parameters (11)
Channel Mode
Enhancement
Qualification
AEC-Q101
Tradename
MDmesh
Configuration
Single
Country of Origin
SG
Fall Time
14 ns
Rise Time
11 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
34 ns
Typical Turn-On Delay Time
14 ns
Unit Weight
0.139332 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

STH10N80K5-2AG Specifications and Datasheet | ChipSourceHub