Infineon Technologies
IKW50N65RH5XKSA1
IGBTs 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBTs
- Series
- Trenchstop IGBT5 H5
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
14 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 80 A
- Pd - Power Dissipation
- 305 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Country of Assembly
- CN
- Country of Diffusion
- DE
- Country of Origin
- DE
Show more parameters (2)
- Tradename
- TRENCHSTOP ~ CoolSiC
- Part # Aliases
- IKW50N65RH5 SP004038142
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.