Vishay / Siliconix
SQM200N04-1m1L_GE3
MOSFET 40V 200A, 375W AEC-Q101 Qualified
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SQ
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 200 A
- Rds On - Drain-Source Resistance
- 800 uOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 413 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 375 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- TrenchFET
- Height
- 4.82 mm
- Length
- 10.41 mm
- Transistor Type
- 1 N-Channel
- Width
- 9.65 mm
- Forward Transconductance - Min
- 219 S
- Fall Time
- 126 ns
- Rise Time
- 12 ns
- Typical Turn-Off Delay Time
- 443 ns
- Typical Turn-On Delay Time
- 13 ns
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.