Vishay / Siliconix
SQ2398ES-T1_GE3
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SQ
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 1.6 A
- Rds On - Drain-Source Resistance
- 300 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 2.3 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 2 W
Show more parameters (11)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- TrenchFET
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 3 S
- Fall Time
- 17 ns
- Rise Time
- 18 ns
- Typical Turn-Off Delay Time
- 7 ns
- Typical Turn-On Delay Time
- 5 ns
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.