Diodes Incorporated
DMP45H21DHE-13
MOSFET MOSFET BVDSS: 251V-500V
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Package
- SOT-223-3
- Mounting Style
- SMD/SMT
- Packaging
- 3 V
Technical Specifications
18 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 450 V
- Id - Continuous Drain Current
- 600 mA
- Rds On - Drain-Source Resistance
- 21 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 4.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 12.5 W
Show more parameters (6)
- Configuration
- Single
- Channel Mode
- Enhancement
- Fall Time
- 21 ns
- Rise Time
- 22 ns
- Typical Turn-Off Delay Time
- 18 ns
- Typical Turn-On Delay Time
- 17 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.