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ROHM Semiconductor

RQ5C060BCTCL

MOSFET Pch -20V -6A Si MOSFET

Basic Information

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Manufacturer
ROHM Semiconductor
Product Category
MOSFET
Package
SOT-346-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

21 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
6 A
Rds On - Drain-Source Resistance
16.1 mOhms
Vgs th - Gate-Source Threshold Voltage
1.2 V
Vgs - Gate-Source Voltage
8 V
Qg - Gate Charge
19.2 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1 W
Show more parameters (9)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 P-Channel
Forward Transconductance - Min
9 S
Fall Time
72 ns
Rise Time
38 ns
Typical Turn-Off Delay Time
105 ns
Typical Turn-On Delay Time
13 ns
Part # Aliases
RQ5C060BC

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RQ5C060BCTCL Specifications and Datasheet | ChipSourceHub