Infineon Technologies
FS50R12KT3BPSA1
IGBT Modules 1200 V, 50 A sixpack IGBT module
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Series
- FSXR12K3G
- Packaging
- Tray
Technical Specifications
12 parameters- Product
- IGBT Silicon Modules
- Configuration
- 6-Pack
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.7 V
- Continuous Collector Current at 25 C
- 75 A
- Gate-Emitter Leakage Current
- 400 nA
- Pd - Power Dissipation
- 280 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Country of Origin
- AT
- Technology
- Si
- Part # Aliases
- FS50R12KT3 SP005422404
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.