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Taiwan Semiconductor

TQM050NB06CR RLG

MOSFETs 60V, 104A, Single N-Channel Power MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Taiwan Semiconductor
Product Category
MOSFETs
Package
PDFN56U-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

24 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
104 A
Rds On - Drain-Source Resistance
5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3.8 V
Qg - Gate Charge
114 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
136 W
Show more parameters (12)
Channel Mode
Enhancement
Qualification
AEC-Q101
Configuration
Single
Country of Origin
TW
Fall Time
32 ns
Forward Transconductance - Min
71 S
Rise Time
20 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
82 ns
Typical Turn-On Delay Time
11 ns
Part # Aliases
TQM050NB06CR
Unit Weight
0.013143 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TQM050NB06CR RLG Specifications and Datasheet | ChipSourceHub