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onsemi

NTLJS4D9N03HTAG

MOSFETs T8 30V

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NTLJS4D9N03H
Package
WDFN-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
15.9 A
Rds On - Drain-Source Resistance
6.1 mOhms
Vgs - Gate-Source Voltage
- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage
2.1 V
Qg - Gate Charge
6.8 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2.4 W
Show more parameters (11)
Channel Mode
Enhancement
Configuration
Single
Country of Assembly
MY
Country of Diffusion
JP
Country of Origin
MY
Fall Time
5.7 ns
Forward Transconductance - Min
51 S
Rise Time
5.5 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
17 ns
Typical Turn-On Delay Time
11 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTLJS4D9N03HTAG Specifications and Datasheet | ChipSourceHub