Toshiba
TK9R7A15Q5,S4X
MOSFETs TO220 150V 1.1A N-CH
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFETs
- Package
- TO-220SIS-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 49 A
- Rds On - Drain-Source Resistance
- 9.7 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Qg - Gate Charge
- 50 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 45 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 36 ns
- Rise Time
- 42 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 68 ns
- Typical Turn-On Delay Time
- 69 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.