Toshiba
SSM3K35AFS,LF
MOSFET LowON Res MOSFET ID=.25A VDSS=20V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- SSM3K35AF
- Package
- SSM-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 250 mA
- Rds On - Drain-Source Resistance
- 750 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 350 mV
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 340 pC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 500 mW
- Configuration
- Single
Show more parameters (8)
- Channel Mode
- Enhancement
- Tradename
- U-MOSIII
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 0.5 S
- Fall Time
- 5.5 ns
- Rise Time
- 2 ns
- Typical Turn-Off Delay Time
- 6.5 ns
- Typical Turn-On Delay Time
- 2 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.