onsemi
FGHL50T65MQDT
IGBTs FS4 MID SPEED IGBT 650V 50A TO247-3L WITH FULL RATED CURRENT DIODE
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- IGBTs
- Series
- FGHL50T65MQDT
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
12 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.45 V
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 80 A
- Pd - Power Dissipation
- 268 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Country of Assembly
- CN
- Country of Diffusion
- KR
- Country of Origin
- CN
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.