Vishay
SQJ844AEP-T1_BE3
MOSFETs DUAL N-CHANNEL 30-V (D-S) 175C MOSFE
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Product Category
- MOSFETs
- Series
- SQJ
- Package
- SO-8
- Mounting Style
- SMD/SMT
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 8 A
- Rds On - Drain-Source Resistance
- 16.6 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 17 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 48 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Configuration
- Dual
- Country of Origin
- DE
- Fall Time
- 7 ns
- Rise Time
- 10 ns
- Transistor Type
- 2 N-Channel
- Typical Turn-Off Delay Time
- 20 ns
- Typical Turn-On Delay Time
- 4.5 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.