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Infineon Technologies

F3L8MXTR12C2M2H11BPSA1

MOSFET Modules EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology

Basic Information

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Manufacturer
Infineon
Brand
Infineon Technologies
Product Category
MOSFET Modules
Series
EasyPACK C series
Mounting Style
Press Fit
Packaging
Tray

Technical Specifications

23 parameters
Technology
SiC
Vds - Drain-Source Breakdown Voltage
1.2 kV
Id - Continuous Drain Current
95 A
Rds On - Drain-Source Resistance
16.8 mOhms
Vgs - Gate-Source Voltage
- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage
4.3 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
20 mW
Configuration
Module
Country of Origin
AT
Fall Time
28.7 ns
Show more parameters (11)
Height
12 mm
If - Forward Current
50 A
Length
57.1 mm
Product
MOSFET Module
Rise Time
24.5 ns
Tradename
CoolSiC
Type
MOSFET
Typical Turn-Off Delay Time
63 ns
Typical Turn-On Delay Time
50.4 ns
Vf - Forward Voltage
4.35 V
Width
53 mm

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

F3L8MXTR12C2M2H11BPSA1 Specifications and Datasheet | ChipSourceHub