Infineon Technologies
BSO150N03MDGXUMA1
MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS 3M
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
27 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 9.3 A
- Rds On - Drain-Source Resistance
- 12.5 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 17 nC, 17 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2 W
Show more parameters (15)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Tradename
- OptiMOS
- Height
- 1.75 mm
- Length
- 4.9 mm
- Transistor Type
- 2 N-Channel
- Width
- 3.9 mm
- Forward Transconductance - Min
- 12 S, 12 S
- Fall Time
- 4.2 ns, 4.2 ns
- Moisture Sensitive
- Yes
- Rise Time
- 3.8 ns, 3.8 ns
- Typical Turn-Off Delay Time
- 8.7 ns, 8.7 ns
- Typical Turn-On Delay Time
- 7.3 ns, 7.3 ns
- Part # Aliases
- BSO150N03MD BSO15N3MDGXT G SP000447476
- Unit Weight
- 0.019048 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.