ON Semiconductor
MJD45H11RLG
Bipolar Transistors - BJT 8A 80V 20W PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD45H11
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 5 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 8 A
- Gain Bandwidth Product fT
- 90 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 2.38 mm
- Length
- 6.73 mm
Show more parameters (5)
- Width
- 6.22 mm
- Continuous Collector Current
- 8 A
- DC Collector/Base Gain hfe Min
- 60
- Pd - Power Dissipation
- 20 W
- Unit Weight
- 0.035274 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.