Toshiba
SSM6N39TU,LF
MOSFET LowON Res MOSFET ID=1.6A VDSS=20V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- SSM6N39TU
- Package
- UF-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 1.6 A
- Rds On - Drain-Source Resistance
- 87 mOhms, 87 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 350 mV
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 7.5 nC, 7.5 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 500 mW
- Configuration
- Dual
Show more parameters (7)
- Channel Mode
- Enhancement
- Tradename
- U-MOSIII
- Transistor Type
- 2 N-Channel
- Forward Transconductance - Min
- 2.5 S, 2.5 S
- Typical Turn-Off Delay Time
- 8.3 ns, 8.3 ns
- Typical Turn-On Delay Time
- 11.5 ns, 11.5 ns
- Unit Weight
- 0.000247 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.