IXYS
IXTT12N150HV
MOSFET DISCMOSFET N-CH STD-HIVOLTAGE
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Package
- TO-268HV-2
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.5 kV
- Id - Continuous Drain Current
- 12 A
- Rds On - Drain-Source Resistance
- 2.2 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 106 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 890 W
Show more parameters (7)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 14 ns
- Rise Time
- 16 ns
- Typical Turn-Off Delay Time
- 53 ns
- Typical Turn-On Delay Time
- 26 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.