STMicroelectronics
STGWA30H65FB
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Series
- STGWA30H65FB
- Package
- TO-247-3
- Mounting Style
- Through Hole
Technical Specifications
10 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.55 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 60 A
- Pd - Power Dissipation
- 260 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Gate-Emitter Leakage Current
- 250 nA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.