Central Semiconductor
2N5189 TIN/LEAD
Bipolar Transistors - BJT NPN 60Vcbo 35Vceo 5.0Vebo 5.0W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5189
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 35 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 5 W
- Gain Bandwidth Product fT
- 25 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Collector/Base Gain hfe Min
- 30 at 100 mA, 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.