onsemi
FDB28N30TM
MOSFETs 300V N-Channel
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- MOSFETs
- Series
- FDB28N30TM
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
24 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 300 V
- Id - Continuous Drain Current
- 28 A
- Rds On - Drain-Source Resistance
- 108 mOhms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Qg - Gate Charge
- 50 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 250 W
Show more parameters (12)
- Channel Mode
- Enhancement
- Tradename
- UniFET
- Configuration
- Single
- Country of Assembly
- CN
- Country of Diffusion
- CZ
- Country of Origin
- CN
- Fall Time
- 69 ns
- Rise Time
- 135 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 79 ns
- Typical Turn-On Delay Time
- 35 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.