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ON Semiconductor

NVMFS4C03NT1G

MOSFET NFET SO8FL 30V 138A 2.1MO

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
MOSFET
Package
SO-FL-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

22 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
159 A
Rds On - Drain-Source Resistance
1.4 mOhms
Vgs th - Gate-Source Threshold Voltage
1.3 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
45.2 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
77 W
Show more parameters (10)
Configuration
Single
Channel Mode
Enhancement
Qualification
AEC-Q101
Transistor Type
1 N-Channel
Forward Transconductance - Min
136 S
Fall Time
17 ns
Rise Time
32 ns
Typical Turn-Off Delay Time
27 ns
Typical Turn-On Delay Time
14 ns
Unit Weight
0.003781 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVMFS4C03NT1G Specifications and Datasheet | ChipSourceHub