ChipSourceHub

Vishay Semiconductors

SQA462CEJW-T1_GE3

MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SQA462CEJW
Package
SOT-23-3
Mounting Style
SMD/SMT

Technical Specifications

20 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
5.63 A
Rds On - Drain-Source Resistance
38 mOhms
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
5.9 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
13.6 W
Show more parameters (8)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
HK
Fall Time
3 ns
Rise Time
3 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
13 ns
Typical Turn-On Delay Time
6 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQA462CEJW-T1_GE3 Specifications and Datasheet | ChipSourceHub