Infineon Technologies
FF400R12KT3P_E
IGBT Modules
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Package
- Module
- Mounting Style
- Chassis Mount
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Product
- IGBT Silicon Modules
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.7 V
- Continuous Collector Current at 25 C
- 400 A
- Gate-Emitter Leakage Current
- 400 nA
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
- Part # Aliases
- FF400R12KT3PEHOSA1 SP001232116
- Unit Weight
- 12 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.