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ROHM Semiconductor

2SC4081U3HZGT106Q

Bipolar Transistors - BJT NPN 50V 0.15A 0.2W SOT-323

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Package
SOT-323-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
400 mV
Maximum DC Collector Current
200 mA
Gain Bandwidth Product fT
180 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
560
Continuous Collector Current
150 mA
Show more parameters (2)
DC Collector/Base Gain hfe Min
120
Pd - Power Dissipation
200 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SC4081U3HZGT106Q Specifications and Datasheet | ChipSourceHub