Vishay / Siliconix
SIHU3N50DA-GE3
MOSFET 500V Vds 30V Vgs IPAK (TO-251)
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- D
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 3 A
- Rds On - Drain-Source Resistance
- 2.6 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 6 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 69 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Forward Transconductance - Min
- 1 S
- Fall Time
- 13 ns
- Rise Time
- 9 ns
- Typical Turn-Off Delay Time
- 11 ns
- Typical Turn-On Delay Time
- 12 ns
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.