Central Semiconductor
CXDM4060N TR
MOSFET 40Vds N-Ch Enh FET 20Vgs 6.0A 1.2W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- MOSFET
- Series
- CXDM
- Package
- SOT-89
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 6 A
- Rds On - Drain-Source Resistance
- 45 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 12 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.2 W
- Configuration
- Single
Show more parameters (4)
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Part # Aliases
- CXDM4060N PBFREE TR
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.