IXYS
IXGR6N170A
IGBT Modules High Voltage IGBTs
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Modules
- Series
- IXGR6N170
- Package
- TO-247AD-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
11 parameters- Product
- IGBT Silicon Modules
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1.7 kV
- Collector-Emitter Saturation Voltage
- 5.4 V
- Continuous Collector Current at 25 C
- 5.5 A
- Gate-Emitter Leakage Current
- 100 nA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.