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Comchip Technology

CJ3139KDW-G

MOSFET MOSFET DUAL P-CHANNEL

Basic Information

View Datasheet ↗
Manufacturer
Comchip Technology
Product Category
MOSFET
Package
SOT-363-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

19 parameters
Technology
Si
Number of Channels
2 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
660 mA
Rds On - Drain-Source Resistance
520 mOhms
Vgs th - Gate-Source Threshold Voltage
350 mV
Vgs - Gate-Source Voltage
12 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
150 mW
Configuration
Dual
Show more parameters (7)
Channel Mode
Enhancement
Forward Transconductance - Min
0.8 S
Fall Time
20.3 ns
Rise Time
5.8 ns
Typical Turn-Off Delay Time
32.7 ns
Typical Turn-On Delay Time
9 ns
Unit Weight
0.000212 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CJ3139KDW-G Specifications and Datasheet | ChipSourceHub