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Qorvo

TGF2965-SM

RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V

Basic Information

View Datasheet ↗
Manufacturer
Qorvo
Product Category
RF JFET Transistors
Package
QFN-16
Mounting Style
SMD/SMT
Packaging
Tray
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Type
HEMT
Technology
GaN SiC
Gain
18 dB
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
32 V
Vgs - Gate-Source Breakdown Voltage
- 2.7 V
Id - Continuous Drain Current
600 mA
Output Power
6 W
Pd - Power Dissipation
7.5 W
Configuration
Single
Operating Frequency
30 MHz to 3 GHz
Moisture Sensitive
Yes
Show more parameters (2)
Part # Aliases
1123170
Unit Weight
0.002014 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TGF2965-SM Specifications and Datasheet | ChipSourceHub