Diodes Incorporated
ZXMN6A08E6TA
MOSFET 60V N-Chnl UMOS
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- ZXMN6A0
- Package
- SOT-26-6
- Mounting Style
- SMD/SMT
- Packaging
- 1 V
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 3.5 A
- Rds On - Drain-Source Resistance
- 80 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 5.8 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.1 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 1.3 mm
- Length
- 3.1 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 N-Channel
- Type
- MOSFET
- Width
- 1.8 mm
- Forward Transconductance - Min
- 6.6 S
- Fall Time
- 4.6 ns
- Rise Time
- 2.1 ns
- Typical Turn-Off Delay Time
- 12.3 ns
- Typical Turn-On Delay Time
- 2.6 ns
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.