Diodes Incorporated
DMN32D0LFB4-7B
MOSFETs MOSFET BVDSS: 25V 30V X2-DFN1006-3 T&R 10K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFETs
- Package
- X2-DFN1006-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 440 mA
- Rds On - Drain-Source Resistance
- 1.2 Ohms
- Vgs - Gate-Source Voltage
- - 10 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Qg - Gate Charge
- 600 pC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 350 mW
Show more parameters (9)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 7.9 ns
- Rise Time
- 2.5 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 19 ns
- Typical Turn-On Delay Time
- 3.4 ns
- Unit Weight
- 0.000035 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.