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ON Semiconductor

MUN5314DW1T1G

Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
MUN5314DW1
Package
SC-88-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

17 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Input Resistor
10 kOhms
Typical Resistor Ratio
0.21
DC Collector/Base Gain hfe Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
187 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
80 at 5 mA at 10 V
Show more parameters (5)
Height
0.9 mm
Length
2 mm
Width
1.25 mm
Number of Channels
2 Channel
Unit Weight
0.000219 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MUN5314DW1T1G Specifications and Datasheet | ChipSourceHub