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onsemi

NTMD3P03R2G

MOSFETs 30V 3.05A P-Channel

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NTMD3P03
Package
SOIC-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

24 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
2 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
3.05 A
Rds On - Drain-Source Resistance
85 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
25 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2 W
Show more parameters (12)
Channel Mode
Enhancement
Configuration
Dual
Country of Assembly
PH
Country of Diffusion
TW
Country of Origin
PH
Fall Time
35 ns, 45 ns
Forward Transconductance - Min
5 S
Rise Time
42 ns, 16 ns
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
32 ns, 45 ns
Typical Turn-On Delay Time
16 ns, 12 ns
Unit Weight
0.002610 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTMD3P03R2G Specifications and Datasheet | ChipSourceHub