ON Semiconductor
MJE5731AG
Bipolar Transistors - BJT BIP PNP 1A 375V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJE5731A
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 375 V
- Collector- Base Voltage VCBO
- 350 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 10 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 15.75 mm
- Length
- 10.53 mm
- Width
- 4.83 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 40000 mW
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.