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Rectron

RM10N100LDV-T

MOSFETs

Basic Information

View Datasheet ↗
Manufacturer
Rectron
Product Category
MOSFETs
Package
TO-252-2
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

20 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
10 A
Rds On - Drain-Source Resistance
130 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
21.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
40 W
Show more parameters (8)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
CN
Fall Time
9.1 ns
Forward Transconductance - Min
3.5 S
Rise Time
7.4 ns
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
11 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RM10N100LDV-T Specifications and Datasheet | ChipSourceHub