ON Semiconductor
NTMD3P03R2G
MOSFET 30V 3.05A P-Channel
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- MOSFET
- Series
- NTMD3P03
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 3.05 A
- Rds On - Drain-Source Resistance
- 85 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2 W
- Configuration
- Dual
- Channel Mode
- Enhancement
Show more parameters (11)
- Height
- 1.5 mm
- Length
- 5 mm
- Transistor Type
- 2 P-Channel
- Type
- MOSFET
- Width
- 4 mm
- Forward Transconductance - Min
- 5 S
- Fall Time
- 35 ns, 45 ns
- Rise Time
- 42 ns, 16 ns
- Typical Turn-Off Delay Time
- 32 ns, 45 ns
- Typical Turn-On Delay Time
- 16 ns, 12 ns
- Unit Weight
- 0.006596 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.